JPH0587029B2 - - Google Patents

Info

Publication number
JPH0587029B2
JPH0587029B2 JP61080479A JP8047986A JPH0587029B2 JP H0587029 B2 JPH0587029 B2 JP H0587029B2 JP 61080479 A JP61080479 A JP 61080479A JP 8047986 A JP8047986 A JP 8047986A JP H0587029 B2 JPH0587029 B2 JP H0587029B2
Authority
JP
Japan
Prior art keywords
film
semiconductor film
semiconductor
insulating
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61080479A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62235784A (ja
Inventor
Yutaka Takato
Masahiro Adachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP61080479A priority Critical patent/JPS62235784A/ja
Publication of JPS62235784A publication Critical patent/JPS62235784A/ja
Publication of JPH0587029B2 publication Critical patent/JPH0587029B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
JP61080479A 1986-04-07 1986-04-07 薄膜トランジスタの製造方法 Granted JPS62235784A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61080479A JPS62235784A (ja) 1986-04-07 1986-04-07 薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61080479A JPS62235784A (ja) 1986-04-07 1986-04-07 薄膜トランジスタの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP6219493A Division JP2702865B2 (ja) 1993-03-22 1993-03-22 薄膜トランジスタ

Publications (2)

Publication Number Publication Date
JPS62235784A JPS62235784A (ja) 1987-10-15
JPH0587029B2 true JPH0587029B2 (en]) 1993-12-15

Family

ID=13719408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61080479A Granted JPS62235784A (ja) 1986-04-07 1986-04-07 薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS62235784A (en])

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH021947A (ja) * 1988-06-09 1990-01-08 Sharp Corp 薄膜トランジスタの製造方法
GB2220792B (en) * 1988-07-13 1991-12-18 Seikosha Kk Silicon thin film transistor and method for producing the same
JPH03148136A (ja) * 1989-11-02 1991-06-24 Matsushita Electric Ind Co Ltd 半導体素子および半導体素子の製造方法
JP6422310B2 (ja) 2014-11-12 2018-11-14 三菱電機株式会社 薄膜トランジスタ基板、その製造方法、及び、液晶表示装置
JP6501514B2 (ja) 2014-12-24 2019-04-17 三菱電機株式会社 薄膜トランジスタ基板およびその製造方法
JP6689108B2 (ja) 2016-03-22 2020-04-28 三菱電機株式会社 薄膜トランジスタ基板およびその製造方法
JP6768462B2 (ja) 2016-11-17 2020-10-14 三菱電機株式会社 薄膜トランジスタ、薄膜トランジスタ基板、液晶表示装置、及び、薄膜トランジスタの製造方法
US10741690B2 (en) 2017-02-16 2020-08-11 Mitsubishi Electric Corporation Thin film transistor, thin film transistor substrate, and liquid crystal display device

Also Published As

Publication number Publication date
JPS62235784A (ja) 1987-10-15

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term